2007. 3. 29 1/2 semiconductor technical data KTC3964 epitaxial planar npn transistor revision no : 1 to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.50 0.5 + _ + _ + _ high current application. switching applications solenoid drive applications temperature compensated for audio amplifier output stage features high dc current gain : h fe = 500(min) (i c =400ma) low collector emitter saturation voltage : v ce (sat)=0.5v(max) (i c =300ma) maximum rating (ta=25 ) electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =40v, i e =0 - - 10 a emitter cut-off current i ebo v eb =7v, i c =0 - - 1 a collector-emitter breakdown voltage v (br)ceo i c =10ma, i b =0 40 - - v dc current gain h fe v ce =1v, i c =400ma 500 - - collector-emitter saturation voltage v ce(sat) i c =300ma, i b =1ma - 0.3 0.5 v base-emitter saturation voltage v be(sat) i c =300ma, i b =1ma - - 1.1 v transition frequency f t v ce =2v, i c =100ma - 220 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 20 - pf switching time turn on time t on i b1 100? b1 i cc v =30v i b2 i b2 20 sec i =-i =-1ma, b1 b2 output input 1% duty cycle < = - 1.0 - s storage time t stg - 3.0 - fall time t f - 1.2 - characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 7 v collector current i c 2 a collector power dissipation p c 1.5 w junction temperature t j 150 storage temperature range t stg -55 150
2007. 3. 29 2/2 KTC3964 revision no : 1 dc current gain h fe base-emitter saturation voltage v be(sat) (v) collector current i c (a) 0.1 v be(sat) - i c collector-emitter voltage v ce (v) collector current i c (a) 0 i c - v ce 3 17 6 4 25 collector current i c (a) 0.01 h fe - i c 1 0.1 0.01 0.1 1 1.0 100 1000 v ce(sat) - i c collector-emitter voltage v ce (v) 0.01 0.1 0.1 collector current i c (a) 1.0 1.0 0 0.4 0.8 1.2 2.0 1.6 2.4 0.5 1 2 5 0 10 20 ta=100 c ta=25 c ta=100 c 25 c 25 c -55 c i b = 0.2ma ta=100 c common emitter v ce =1v common emitter i c / i b = 300 common emitter i c / i b = 300 common emitter ta=25 c -55 c 25 c -55 c collector power dissipation p d (w) p d - ta ambient temperature ta ( c) 0 40 080 200 160 120 0.5 1.0 1.5 2.0 collcter current i c (a) collector emitter voltage v ce (v) safe operation area 0.1 10 1 i c max(pulsed)* i c max(continuous) v ceo max *: single nonrepetitive pulse t a = 25 c curves must be derated lineraly with increase in temperature dc operation ta=25 c 0.1 0.01 1 1ms* 1s* 10ms* 100ms*
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